2-D ANALYTICAL MODELING OF DUAL-MATERIAL DOUBLE GATE SILICON-ON-NOTHING MOSFET
Pritha Banerjee, Aman Mahajan, Subir Kumar Sarkar
Department of Electronics &Telecommunication Engineering, Jadavpur University, Kolkata-700032, India
This is an open access article distributed under the Creative Commons Attribution License CC BY 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
This paper presents a 2-D analytical model of Dual-Material Double Gate Silicon-On-Nothing (DMDG SON) MOSFET. In order to obtain the surface potential variation of the device, 2-D Poisson’s equation with proper boundary conditions is solved. Electric field and threshold voltage are calculated for the device and the various short channel effects like DIBL, threshold voltage roll-off, hot carrier effect are examined. The close agreement between the calculated and simulated values obtained from a 2-D device simulator namely ATLAS validate the proposed model.
Short channel effects; DIBL; threshold voltage roll-off; hot carrier effect; SOI/SON MOSFET