2-D ANALYTICAL MODELING OF DUAL-MATERIAL DOUBLE GATE SILICON-ON-NOTHING MOSFET
Author(s):
Pritha Banerjee, Aman Mahajan, Subir Kumar Sarkar
Author Affiliation:
Department of Electronics &Telecommunication Engineering, Jadavpur University, Kolkata-700032, India
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Abstract
This paper presents a 2-D analytical model of Dual-Material Double Gate Silicon-On-Nothing (DMDG SON) MOSFET. In order to obtain the surface potential variation of the device, 2-D Poisson’s equation with proper boundary conditions is solved. Electric field and threshold voltage are calculated for the device and the various short channel effects like DIBL, threshold voltage roll-off, hot carrier effect are examined. The close agreement between the calculated and simulated values obtained from a 2-D device simulator namely ATLAS validate the proposed model.
KEYWORDS:
Short channel effects; DIBL; threshold voltage roll-off; hot carrier effect; SOI/SON MOSFET