Author(s):
Avik Chakraborty¹, Angsuman Sarkar²

Author Affiliation:
¹ECE Department, Bengal Institute of Technology and Management, Bolpur, India
²ECE Department, Kalyani Government Engineering College, Kalyani, India

This is an open access article distributed under the Creative Commons Attribution License CC BY 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

In this paper, a physics-based two-dimensional analytical surface potential model of asymmetric dual material double-gate MOSFET has been developed. The model details the role of various MOSFET parameters such as source/drain and body doping concentrations, the lengths of the gate metals and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide to influence the surface potential. From the developed expression of surface potential, expression of threshold voltage was derived. Using the analytical model, an investigation about the ability of gate-engineering technique to suppress considered as the most primitive short-channel effects (SCEs) such as the degradation of threshold voltage and Drain Induced Barrier Lowering (DIBL) has been provided.

KEYWORDS:
Dual-material gate; double-gate; short-channel effects (SCEs); surface potential; DIBL