Author(s)

Abhishek Chakraborty, Sourav Bairagya, Angsuman Sarkar

Author affiliation

ECE Department, Kalyani Government Engineering College, Kalyani, West Bengal, India

Abstract

This paper presents an analytical model of surface potential of double surrounding gate MOSFET. The model has been developed using a flux-based approach. The variation of surface potentials for change in different device parameters has been provided.

Keywords

Double surrounding gate MOSFET; surface potential; analytical model; flux-based approach; short-channel effects