ANALYTICAL MODELING OF JUNCTION-LESS SURROUNDING GATE MOSFET BASED BIOSENSOR

Author(s):
Kakali Sarkara, Angsuman Sarkarb

Author Affiliation:
ECE Department, Kalyani Govt. Engineering. College, Kalyani, West Bengal, India

This is an open access article distributed under the Creative Commons Attribution License CC BY 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

Abstract

In this paper, an analytical model of threshold voltage of a junction less surrounding gate MOSFET (JLSRG MOSFET) transistor based biosensor for application in label-free detection of bio-molecules have been presented. Numerous reports exist on the experimental demonstration of nanogap-embedded FET-based bio-sensors, these devices are having low sensitivity. Now in order to increase the sensitivity of the biosensors the concept of a junction-less surrounding gate based biosensor is presented in this letter. The expression of threshold voltage and the surface potentials for different regions of the device have been calculated and Matlab code has been developed for simulation of the analytical model.

KEYWORDS:
surrounding gate MOSFET; surface potential; analytical model threshold voltage