Author(s):
Abhishek Chakraborty^a, Sourav Bairagya^b, Angsuman Sarkar^c

Author Affiliation:
ECE Department, Kalyani Government Engineering College, Kalyani, West Bengal, India

This is an open access article distributed under the Creative Commons Attribution License CC BY 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

This paper presents an analytical model of surface potential of double surrounding gate MOSFET. The model has been developed using a flux-based approach. The variation of surface potentials for change in different device parameters has been provided.

KEYWORDS:
Double surrounding gate MOSFET; surface potential; analytical model; flux-based approach; short-channel effects.