Author(s):
Anup Dey

Author Affiliation:
Electronics and Communication Engineering Department, Jalpaiguri Government Engineering College, Jalpaiguri,

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An attempt is made to analyze theoretically a Tunnel FET with Ge as the source material and atomically thin MoS2 as channel material. The transition metal dichalcogenides (TMDs) have attracted considerable interest for using as channel material for FETs, specifically for mitigating the degradation of device electrostatics. This is due to their ultra-thin planer two-dimensional structure which is also easy to fabricate compared to one-dimensional structures (such as nanowires and nanotubes). In this work the Ge is chosen as the three-dimensional source materials for its low band gap as needed for high band to-band tunneling (BTBT) while high band gap two dimensional bilayer molybdenum disulfide (MoS2) to achieve low OFF-sate current. The Performance of the device is investigated theoretically developing a model for the I-V characteristic. Several performance improvements is envisaged relative to conventional III-V and Si based TFET in terms of current ON-OFF ratio, subthresold swing and gate capacitance .

KEYWORDS:
MoS2; Tunnel FET; VLSI; device technology