Author(s):
Kalyan Biswas^1a, Angsuman Sarkar^2b, Chandan Kumar Sarkar^3c

Author Affiliation:
¹ECE Department, MCKV Institute of Engineering, Liluah, Howrah, India
²ECE Department, Kalyani Government Engineering College, Kalyani, WB, India
³ETCE Department, Nano Device Simulation Laboratory, Jadavpur University, India

This is an open access article distributed under the Creative Commons Attribution License CC BY 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

This paper presents the simulation results of a double gate hetersostructure MOSFET by 2D device simulator, with effective channel length down to 12 nm. A detailed investigation of the impact of gate dielectric material on different Analog and RF performance of an InGaAs/InP heterostructure DG MOSFET is carried out. A thorough analysis of the key figure-of-merits such as transconductance (gm), cutoff frequency (fT), maximum frequency of oscillation (fmax), VIP2 and VIP3 are performed for various dielectric materials with dielectric constant varying from 3.9 to 22. Numerical device simulation data, obtained using 2D device simulator: ATLAS, were compared for different gate dielectrics.

KEYWORDS:
III-V MOSFET; heterostructure; double gate, dielectric material.