MODELING OF ZIGZAG AND ARMCHAIR GNR INTERCONNECTS
Waikhom Mona Chanu1a, Vikash Kumar2b, Ronit Kumar2c, Rahul Anand2d, Debaprasad Das2e
1Department of Computer Science and Engineering, TSSOT, Assam University, India
2Department of Electronics and Communication Engineering, TSSOT, Assam University, India
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In this work, we have presented the modeling of graphene nanoribbon (GNR) based interconnects. At first, the subband energy is studied for metallic and semiconducting GNR for different subbands. We have calculated the number of conduction channels in GNRs for different widths. It is shown that the semiconducting GNRs can have more conduction channels than the metallic GNRs for Fermi energies above 0.2eV and widths lesser than 4nm. The effective mean free path for six lowest subbands as a function of width is also calculated for different Fermi energy and for different Fermi velocity. Finally, we have calculated the resistance per unit length for different GNR widths. It is observed that the resistance of GNR is lower for higher Fermi energy due to larger mean free path and more populated conduction channels.
Graphene nanoribbon (GNR); interconnect; conductance; Fermi energy; effective mean free path