Author(s):
Waikhom Mona Chanu^1a, Vikash Kumar^2b, Ronit Kumar^2c, Rahul Anand^2d, Debaprasad Das^2e

Author Affiliation:
¹Department of Computer Science and Engineering, TSSOT, Assam University, India
²Department of Electronics and Communication Engineering, TSSOT, Assam University, India

This is an open access article distributed under the Creative Commons Attribution License CC BY 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

In this work, we have presented the modeling of graphene nanoribbon (GNR) based interconnects. At first, the subband energy is studied for metallic and semiconducting GNR for different subbands. We have calculated the number of conduction channels in GNRs for different widths. It is shown that the semiconducting GNRs can have more conduction channels than the metallic GNRs for Fermi energies above 0.2eV and widths lesser than 4nm. The effective mean free path for six lowest subbands as a function of width is also calculated for different Fermi energy and for different Fermi velocity. Finally, we have calculated the resistance per unit length for different GNR widths. It is observed that the resistance of GNR is lower for higher Fermi energy due to larger mean free path and more populated conduction channels.

KEYWORDS:
Graphene nanoribbon (GNR); interconnect; conductance; Fermi energy; effective mean free path